Method of growing epitaxial layers

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117 86, 117 89, 117 92, 117108, C36B 2368

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054768110

ABSTRACT:
A method of growing a plurality of epitaxial layers each having a property which is different from each other simultaneously on a common substrate comprises steps of forming at least a first crystal surface and a second crystal surface which are crystallographically non-equivalent to each other on the substrate, introducing particles comprising constituent elements of the epitaxial layers into a region in the vicinity of the substrate, the particles including at least metal-organic molecules containing one of the elements constituting the epitaxial layers, decomposing the metal-organic molecules such that the layer constituting element therein is released as a result of the decomposition, and depositing the aforesaid particles including the element released by the decomposition of the metal-organic molecules on the first and second crystal surfaces so that a first epitaxial layer and a second epitaxial layer, respectively differing in properties from each other, are grown on respective the first and second crystal surfaces, the step of deposition being performed such that the growth of the first and second epitaxial layers is controlled by the decomposition of the metal-organic molecule.

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