Method of growing device quality InP onto an InP substrate using

Details Method of growing device quality InP onto an InP substrate using Method of growing device quality InP onto an InP substrate using

1993-02-19

1993-10-26

Quach, T. N.

Fishing, trapping, and vermin destroying

437133, 148DIG110, H01L 21205

Patent

active

052565955

ABSTRACT:
An organometallic precursor as for example trimethyl indium (TMI) is co-injected with HCl into a hot wall reactor to form volatile InCl, and PH.sub.3 is used as the phosphorus source. Layers of InP are grown at approximately 8 .mu.m/hr with excellent morphology and good electrical properties. Hall measurements at 77K show background n-type conductivity with n=7.times.10.sup.15 /cm.sup.3 and .mu..sup.S 34,000 cm.sub.2 /V-s. The method is capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.

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Ban, V. S., et al., "High Rate Epitaxial . . . ", Appl. Phys. Lett., 62(2), an. 11, 1993, pp. 160-162.
Wolf, S., et al., Silicon Processing, 1986, Lattice Press, pp. 164-174.

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