Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-09-19
1998-11-24
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
111 30, 111 32, 111 33, 111932, C30B 1512
Patent
active
058401164
ABSTRACT:
A process of growing crystals in which the uniformity of the oxygen concentration is desirable. In the process, the upper part of the material in the crucible is heated to form a molten layer, and a solid layer is formed at its lower part, then a seed crystal is made to contact the surface of the molten layer, and pulled up to grow a crystal, while characteristically a magnetic field is applied to the molten layer. This method produces single crystals with a uniform distribution of oxygen concentration. Furthermore, this method produces single crystals at low cost and with a high productivity.
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patent: 5152867 (1992-10-01), Kitaura et al.
patent: 5178720 (1993-01-01), Frederick
Oxygen in Czochralski silicon crystals grown under an axial magnetic field, J. Crystal Growth, vol. 121, No. 4, Aug. 1992, Amsterdam., Sclnick.
Kunemund Robert
Sumitomo Sitix Corporation
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