Method of growing crystal

Details Method of growing crystal Method of growing crystal

1993-06-04

1995-04-04

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 14, 117 19, 117 21, 117932, C30B 1504

Patent

active

054027470

ABSTRACT:
A single crystal material is filled in a crucible, and the whole of the single crystal material is melted to contain doping impurities. A solid layer coagulated upward from the bottom of the crucible is rendered to coexist with a melted layer over the solid layer. The solid layer is melted from the upper side thereof while pulling the single crystal from the melted layer. The ratio by weight between the solid layer and the single crystal material at the start of pulling is adjusted, together with the ratio by weight between the grown single crystal and the melting solid layer. The single crystal is thus grown while changing the volume of the melted layer.

REFERENCES:
patent: 2904512 (1959-09-01), Horn
patent: 2981687 (1961-04-01), Parmee
patent: 3058854 (1962-10-01), Angello
patent: 4133969 (1979-01-01), Zumbrunner

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