Method of growing compound semiconductor thin film using multich

Details Method of growing compound semiconductor thin film using multich Method of growing compound semiconductor thin film using multich

1987-08-24

1990-10-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG3, 148DIG25, 148DIG48, 148DIG169, 156610, 437 82, 437107, 437108, 437963, H01L 21203, H01L 21324

Patent

active

049607200

ABSTRACT:
In molecular beam epitaxial growth of GaAs substrate, a compound semiconductor thin film having Ga and As is grown by Ga beam and As beam in MBE chamber and then the substrate is transferred to an annealing chamber where the substrate is annealed under As vapor pressure. The above process is repeated to a predetermined layer level whereby it eliminates divergence from stoichiometric.

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