Method of growing compound semiconductor on silicon wafer

Details Method of growing compound semiconductor on silicon wafer Method of growing compound semiconductor on silicon wafer

1993-12-20

1995-08-08

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 90, 117105, 437126, C30B 2502

Patent

active

054389518

ABSTRACT:
A technique of heteroepitaxially growing compound semiconductor on a silicon wafer, which can simplify the growth sequence, and improve the productivity and the surface morphology of a growth film. In growing compound semiconductor on a silicon wafer, the growth sequence such as shown in FIG. 1 is used. A necessary thin buffer layer is continuously grown at the temperature raising period up to the crystal growth temperature. Therefore, an independent process of growing a buffer layer at a lower temperature is not necessary, and the surface morphology is also improved by this method of growing compound semiconductor on a silicon wafer.

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Ohori, et al., A novel method for HEMT-on-Si by MOVPE, Inst. Phys. Conf. Ser. No. 129, Chapter 3, 1993, pp. 175-180.
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