Method of growing compound semiconductor epitaxial layer by atom

Details Method of growing compound semiconductor epitaxial layer by atom Method of growing compound semiconductor epitaxial layer by atom

1990-10-30

1992-11-24

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437107, 437108, 437112, H01L 21203, H01L 2120

Patent

active

051660920

ABSTRACT:
A method of growing compound semiconductor epitaxial layer by an atomic layer epitaxy, comprises the steps of blowing on a predetermined surface a compound source material gas constituted by atoms having an ion polarity different from atoms constituting the predetermined surface so that the compound source material is adsorped on the predetermined surface in a non-decomposed state, and decomposing the adsorped compound source material on the predetermined surface into atoms constituting crystals at the predetermined surface so as to grow an atomic layer of atoms having the same ion polarity as the compound source material gas. The ion polarity of the atomic layer prevents adsorption of the compound source material after the atomic layer is grown.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
Mochizuki, K., et al., "Carbon Incorporation in GaAs Layer Grown by Atomic Layer Epitaxy", Journal of Crystal Growth, (1988), pp. 557-561.
Nishizawa et al., "Molecular Layer Epitaxy", J. Electrochem. Soc., vol. 132, May 1985, pp. 1197-1200.
Razeghi et al., "Monolayer Epitaxy . . . by Low-Pressure Metalorganic Chemical Vapor Deposition", Appl. Phys. Lett., vol. 51(26), Dec. 28, 1987, pp. 2216-2218.
Aoyagi et al., "Atomic-Layer Growth of GaAs . . . ", J. Vac. Sci. Technol., B 5(5), Sep./Oct. 1987, pp. 1460-1464.
Toriyama et al., "Lattice Vibration of Thin-Layered AlAs-GaAs Superlathices", Jpn. J. Appl. Phys., vol. 25, No. 12, Dec. 1986, pp. 1895-1901.

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