Method of growing by epitaxy from the vapor phase a material on

Details Method of growing by epitaxy from the vapor phase a material on Method of growing by epitaxy from the vapor phase a material on

1974-02-08

1976-06-29

Satterfield, Walter R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148172, 148174, H01L 736

Patent

active

039665135

ABSTRACT:
A method of epitaxially growing a monocrystalline layer on a substrate that is oxidizable in air in which an epitaxial layer of the oxidizable material is grown on a support of a monocrystalline material having the desired crystalline structure, enough of the support material is then removed to enable removal by etching of the support from the layer of the oxidizable material, the support and attached layer are then introduced into a non-oxidizing atmosphere where the support is etched away from the layer of the oxidizable material and a monocrystalline layer of another material is grown by epitaxial deposition on the exposed surface of the surface of the layer of the oxidizable material exposed by etching.

REFERENCES:
patent: 3312570 (1967-04-01), Ruehrwein
patent: 3322575 (1967-05-01), Ruehrwein
patent: 3393103 (1968-07-01), Hellbardt et al.
patent: 3428500 (1969-02-01), Maeda
patent: 3429756 (1969-02-01), Groves
patent: 3647581 (1972-03-01), Mash
patent: 3677846 (1972-07-01), Theunissen et al.

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