Method of growing an alloy film by a layer-by-layer process on a

Details Method of growing an alloy film by a layer-by-layer process on a Method of growing an alloy film by a layer-by-layer process on a

1983-11-17

1986-03-11

Smith, John D.

Coating processes

Measuring, testing, or indicating

Thickness or uniformity of thickness determined

156601, 156DIG103, 156610, 427 10, 427 87, C30B 2302, H01L 21203

Patent

active

045754624

ABSTRACT:
A method of growing an alloy film by a layer-by-layer process on a substrate is described, together with a method of making an semiconductor device in which an alloy film is grown on a substrate by a layer-by-layer process. The atomic ratio of constituents present in the alloy film is determined during growth of the film from the growth rates of the alloy film and of at least one intermediate film consisting of at least one constituent of the alloy. The intermediate film or films are grown between the alloy film and the substrate. During growth of each film, the growth surface is irradiated with a beam of electrons and measurement is carried out of the period of oscillations in the intensity of the stream of electrons diffracted at the growth surface, or specularly reflected by the growth surface, or emitted from the growth surface, or of the current flowing to ground through the substrate. These periods are equal to the respective times taken to grow on a monolayer of the respective film.

REFERENCES:
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patent: 4137122 (1979-01-01), Acker
patent: 4233092 (1980-11-01), Harris
patent: 4383872 (1983-05-01), Roberts
patent: 4400407 (1983-08-01), Jones
Ly, "Recent Developments in Monitoring and Controlling Techniques for Alloy, Deposition Processes", Thin Solid Films, vol. 45 (1977), p. 481.
Harris et al, "Oscillations . . . "Surface Science 103 (1981) L90-L91 .COPYRGT.North Holland Publishing Company.
Wood, "Red Intensity Oscillations During MBE of GaAs", Surface Science 108 (1981) L441-L443, North Holland Publishing Company.

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