Fishing – trapping – and vermin destroying
Patent
1988-12-13
1989-08-08
Hearn, Brian E.
Fishing, trapping, and vermin destroying
148DIG148, 156612, 156DIG64, 156613, 156614, 437103, H01L 2120, C04B 3556
Patent
active
048552542
ABSTRACT:
A single crystalline silicon carbide (.beta.-SiC) layer having a thickness greater than 1 .mu.m is grown on a silicon substrate by the following method of the present invention. The silicon substrate is provided in a reactor chamber, and the reactor chamber is evacuated and maintained at a reduced atmospheric pressure during the growing processes. While flowing a mixed gas containing acetylene into the reactor chamber, the substrate is heated up at a temperature range from 800.degree. to 1000.degree. C., preferable in a range from 810.degree. to 850.degree. C., whereby a buffer layer of carbonized silicon having a thickness of 60 to 100 .ANG. is grown on the substrate. Thereafter, the flowing gas is changed to a mixed gas containing hydrocarbon and chlorosilane, and the substrate temperature is raised to a temperature from 850.degree. to 950.degree. C. In this process, a single crystalline .beta.-SiC layer can be grown on the buffer layer, and a thickness of a few .mu.m for the grown .beta.-SiC layer can be expected.
REFERENCES:
patent: 3956032 (1976-05-01), Powell et al.
patent: 3960619 (1976-06-01), Seiter
patent: 4000028 (1986-02-01), Addamiano
patent: 4459338 (1984-07-01), Angelini et al.
patent: 4623425 (1976-11-01), Suzuki et al.
Nishino et al., "Reproducible Preparation of Cubic-SiC Single Crystals by Chemical Vapor Deposition", Extended Abs. of the 15th Conference on Solid State Devices and Materials, Tokyo, 1983, pp. 317-320.
Addamiano et al., "`Buffer-Layer` Technique for the Growth of Single Crystal SiC on Si", Appl. Phys. Lett., vol. 44, No. 5, Mar. 1, 1984, pp. 525-527.
Suzuki et al., "Epitaxial Growth of .beta.-SiC Single Crystals by Successive Two-Step CVD", J. of Crystal Growth, vol. 70, 1984, pp. 287-290.
Addamiano et al., "Chemically-Formed Buffer Layers for Growth of Cubic Silicon Carbide on Silicon Single Crystals", J. of Crystal Growth, vol. 70, 1984, pp. 291-294.
Nishino et al., "Chemical Vapor Deposition of Single Crystalline .beta.-SiC Films on Silicon Substrate with Sputtered SiC Intermediate Layer", J. Elecrochem. Soc., vol. 127, No. 12, Dec. 1980, pp. 2674-2680.
Nishino et al., "Production of Large-Area Single-Crystal Wafers of Cubic SiC for Semiconductor Devices", Appl. Phys. Lett., vol. 42, No. 5, Mar. 1, 1983, pp. 460-462.
Learn et al., "Low-Temperature Epitaxy of .beta.-SiC by Reactive Deposition", Appl. Phys. Lett. vol. 17, No. 1, Jul. 1, 1970, pp. 26-29.
Eshita Takashi
Furumura Yuji
Itoh Kikuo
Mieno Fumitake
Fujitsu Limited
Hearn Brian E.
Wilczeulski M.
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