Fishing – trapping – and vermin destroying
Patent
1988-01-19
1990-03-13
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437110, 437126, H01L 21265
Patent
active
049079743
ABSTRACT:
A semiconductor device includes a plurality of crystalline layers successively disposed directly on a substrate or on a buffer layer on the substrate and a getter layer comprising a metal of high activity disposed between the substrate or the buffer layer and the plurality of crystalline layers. An MO-CVD crystal growth method for growing a plurality of crystalline layers successively on a substrate or on a substrate having a buffer layer by supplying gases to a reaction tube containing a substrate includes growing a getter layer, including a metal of high activity for removing impurities, on the substrate or the buffer layer before growing a target crystalline layer.
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"MOCVD Growth of (Al.sub.x Ga.sub.l-x).sub.y In.sub.l-y P and Double Heterostructures For Visible Light Lasers", I Hino et al., J. Crystal Growth 68 (1984), pp. 483-489.
Chaudhuri Olik
McAndrews Kevin
Mitsubishi Denki & Kabushiki Kaisha
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