Method of growing a rare earth silicate single crystal

Details Method of growing a rare earth silicate single crystal Method of growing a rare earth silicate single crystal

1997-04-24

1998-03-17

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117928, C30B 2504

Patent

active

057282137

ABSTRACT:
A method of growing a rare earth silicate single crystal from a melt of a starting material containing a rare earth oxide and a silicon oxide, wherein the starting material in which a density of Fe as an impurity is not more 0.1 ppm, a density of Al as an impurity is not more than 0.4 ppm, or the starting material showing a weight loss of not more than 1.0% when heated up to 1,000.degree. C. is used.
This method which makes it possible to stably obtain a rare earth silicate single crystal having a good scintillator performance, such as free of voids and/or non-colored crystals, or may cause no poor fluorescent characteristics due to a compositional deviation of materials.

REFERENCES:
patent: 4975394 (1990-12-01), Kanzaki et al.
patent: 5025151 (1991-06-01), Melcher
"Single Crystal Rare Earth Perovskites-by Pulling From Molten Oxides, for Magnetic Bubble Memories"; Commissariat Energie Atomique.
Utsu and Akiyama, "Growth and Applications of Gd.sub.2 SiO.sub.5 :Ce Scintillators", Journal of Crystal Growth, 109(1/4):385-391 (1991).
Brandle et al., "Czochralski Growth of Rare-Earth Orhtosilicates (La.sub.2 SiO.sub.5)", Journal of Crystal Growth, 79(1-3):308-315 (1986).

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