Method of growing a nitride single crystal on silicon wafer,...

Details Method of growing a nitride single crystal on silicon wafer,... Method of growing a nitride single crystal on silicon wafer,...

2007-07-19

2009-11-03

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S094000, C257S190000, C257SE33023, C438S047000

Reexamination Certificate

active

07612361

ABSTRACT:
The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal orientation is prepared. A first nitride buffer layer is formed on the surface of the silicon substrate. Then, an amorphous oxide film is disposed on the first nitride buffer layer. A second buffer layer is disposed on the amorphous oxide film. Thereafter, the nitride single crystal is formed on the second nitride buffer layer.

REFERENCES:
patent: 7071015 (2006-07-01), Shakuda
patent: 2001/0038656 (2001-11-01), Takeuchi et al.
patent: 2005/0139818 (2005-06-01), Lee et al.

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