Method of growing a doped III-V alloy layer by molecular beam ep

Details Method of growing a doped III-V alloy layer by molecular beam ep Method of growing a doped III-V alloy layer by molecular beam ep

1980-12-15

1983-05-17

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 156610, 156612, 427 85, 427 87, 357 63, H01L 21203, H01L 21363

Patent

active

043838723

ABSTRACT:
In the present invention, an epitaxial layer of a doped III-V alloy is grown on a semiconductor substrate by a molecular beam epitaxy process using a molecular beam of lead together with molecular beams of the constituent elements of the doped III-V alloy. The magnitude of the lead flux is sufficient to form and maintain a presence of from 5 to 20% of a monolayer of lead on the growth surface. The technique is directed particularly to ternary and quaternary III-V compositions.

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patent: 4301323 (1981-11-01), Schink

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