Method of growing a crystal of a compound semiconductor at a low

Details Method of growing a crystal of a compound semiconductor at a low Method of growing a crystal of a compound semiconductor at a low

1995-08-11

1998-04-21

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117103, 117104, 117106, 117108, 117913, 117923, C30B 2304

Patent

active

057413606

ABSTRACT:
In a method of selectively growing a crystal of a compound semiconductor layer which is composed of gallium and arsenic, a selective growth is selectively carried out on a substrate by using a combination of metallic gallium and a reactive gas, such as trisdimethylminoarsine, which includes a metallic compound of arsenic specified by at least one amine. The combination may includes organometallic gallium, such as trimethylgallium, triethylgallium instead of the metallic gallium. Such a combination serves to selectively deposit the compound semiconductor layer only on an exposed portion uncovered with a mask. Any other compound semiconductor layer may be selectively deposited on the exposed portion. The exposed portion may be composed of GaAs, AlGaAs, or InGaAs.

REFERENCES:
patent: 4636268 (1987-01-01), Tsang
patent: 5124278 (1992-06-01), Bohling et al.
Zimmermann et al. "Amino-arsine and Phosphine Compounds for the MOVPE of III-V Semiconductors", Jounel of Crystal Growth, vol. 129, pp. 37-44, 1993.
Hidaka et al., "Low Temperature Selective Epitaxial Growth of GaAs using triethylgallium and Amino-As in Molecular Beam Epitaxy", Japanese Journel of Applied Physics, Part 1 vol. 33 6a, pp. 3500-3504 abs only, Jun. 1994.

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