Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2006-10-30
2009-10-13
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S464000, C438S692000, C438S977000, C257SE21237
Reexamination Certificate
active
07601615
ABSTRACT:
A semiconductor wafer back-surface grinding method, for grinding a back surface of a semiconductor wafer, an opposed front surface of the semiconductor wafer being adhered to a support base material and being provided with a circuit pattern, including: measuring an initial thickness of the semiconductor wafer before grinding, in a condition where the support base material is adhered to the front surface of the semiconductor wafer; obtaining a cutting depth by subtracting a set final thickness measured after grinding from the initial thickness; and grinding the back surface of the semiconductor wafer, based on the cutting depth.
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Hayashi Tomoo
Nezu Motoi
Christie Parker & Hale LLP
Huynh Andy
Tokyo Seimitsu Co. Ltd.
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