Method of grinding a sapphire wafer

Details Method of grinding a sapphire wafer Method of grinding a sapphire wafer

1984-05-15

1987-05-05

Schmidt, Frederick R.

Abrasive tool making process, material, or composition

Impregnating or coating an abrasive tool

51327, 29576T, B24B 100

Patent

active

046621245

ABSTRACT:
A sapphire wafer-grinding method which can minimize the warp of a plane ground sapphire wafer. A sapphire wafer used with a semiconductor device is so fabricated that its surface is constituted by an R plane {1102}. A plurality of C planes or atomic net planes (0001) extend in parallel crosswise of the sapphire wafer at an inclination angle of about 57.6.degree. to the surface or R plane {1102} of the sapphire wafer. The particles of a rotating grindstone are moved in the normal inclination direction of the C planes (0001) of the sapphire wafer to grind the surface or R plane {1102} of the sapphire wafer. The normal inclination direction of the C planes (0001) of the sapphire wafer includes the directions which are deflected on the R plane from the projection of the C axis [0001] of the sapphire wafer to an extent of .+-.35.degree..

REFERENCES:
patent: 3650074 (1972-03-01), Weinz
patent: 4270316 (1981-06-01), Kramer et al.
Keyser, Carl A., Materials of Engineering, Prentice-Hall, Inc., p. 467, Copyright 1956.
Damage Free Polishing of Polycrystalline Silicon, Nilsson et al., Journal of Electrochem Soc., vol. 128, No. 1, Jan. 1981.

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