Method of gettering using backside polycrystalline silicon

Details Method of gettering using backside polycrystalline silicon Method of gettering using backside polycrystalline silicon

1976-04-02

1977-10-11

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148175, 156612, 357 52, 357 59, 357 64, 427 82, 427 86, H01L 21324, H01L 2904

Patent

active

040533352

ABSTRACT:
An integrated circuit structure and method for manufacturing same which provides for gettering with a backside layer of polycrystalline silicon. The gettering of unwanted impurities from the integrated circuits involves the deposition of a polycrystalline silicon film on a semiconductor wafer prior to any or some high temperature processing steps. The semiconductor body is then subjected to the normal semiconductor processing steps to form semiconductor devices on the surface opposite to the surface having the polycrystalline silicon layer. During these high temperature processing steps, unwanted impurities such as copper, iron, nickel, sodium and potassium ions move toward and into the polycrystalline silicon layer and thereby away from the semiconductor devices. This produces improved yield in the integrated circuit process.

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Gates, H.R., "Gettering Process for Wafer Defect Reduction" I.B.M. Tech. Discl. Bul., vol. 15, No. 6, Nov. 1972, p. 177.

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