Method of generating active semiconductor structures by means of

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 20, 257194, 257289, 257631, H01L 2920, H01L 2978, H01L 29161, H01L 29205

Patent

active

053960890

ABSTRACT:
A unipolar electronic component is proposed with a quasi one dimensional carrier channel which has all the characteristics of an FET. This component can be very simply produced, has "self-alignment" and linear gates with a low capacity in place of planar gates. In this way a very high operating frequency of the component is possible. The structure comprises an initially homogenous 2D-layer with a high carrier mobility which is formed by epitaxy of for example GaAs. The implantation of focussed ions (for example Ga.sup.+ with 100 keV) locally destroys the conductivity of the electron layer. The irradiated regions remain insulating at low temperature or room temperature even after illuminating the cristal with bandgap radiation. The writing in of the insulating layer is carried out along two paths on the chip so that the 2D-carrier layer is subdivided into three regions insulated from one another. The source and drain are only connected by a narrow channel 44 the width of which is continuously tunable by a gate potential which is simultaneously applied to the two gate regions relative to the source, so that a pronounced change of the carrier concentration and thus of the channel resistance arises. The specification also describes integrated circuits made using the same methods.

REFERENCES:
patent: 3655457 (1972-04-01), Duffy
patent: 3696274 (1972-10-01), Davis
patent: 4325073 (1982-04-01), Hughes
patent: 4325181 (1982-04-01), Yoder
patent: 4460910 (1984-07-01), Chappell
patent: 4771013 (1988-09-01), Curran
patent: 4796068 (1989-01-01), Katayama
patent: 4853341 (1989-08-01), Nishioka
patent: 4989052 (1991-01-01), Okada
patent: 5141879 (1992-08-01), Goronkin
Demel, T., et al., "One-dimensional Electronic Systems in Ultrafine Mesa-etched Single and Multiple Quantum Well Wires," Appl. Phys. Lett. 53 (22), 28 Nov. 1988, pp. 2176-2178.
Wieck, A. D., et al., "In-plane-gated Quantum Wire Transistor Fabricated with Directly Written Focused Ion Beams," Appl. Phys. Lett. 56 (10), 5 Mar. 1990, pp. 928-930.
Moreland, J., et al., "Air as an Adjustable Insulator for C-V and G-V Analysis of Semiconductor Surfaces," Appl. Phys. Lett. 45 (1), 1 Jul. 1984, pp. 104-105.
Skocpol, W. J., et al., "Quantum Transport in Narrow Mosfet Channels," Surface Science 170 (1986) pp. 1-13.
Grambow, P., et al., "Preparation of One-Dimensional Single and Multi-Layered Quantum Wire Structures by Ultrafine Deep Mesa Etching Techniques," Microelectronic Engineering 9 (1989) pp. 357-360.
Hirayama, et al., "Conductance Characteristics of Ballistic One-Dimensional Channels Controlled by a Gate Electrode," Appl. Phys. Lett. 54 (25), 19 Jun. 1989, pp. 2556-2558.
Hirayama, et al., "Electronic Transport Through Very Short and Narrow Channels Constricted in GaAs by Highly Resistive Ga-Implanted Regions," Phys. Review B, 39(8), 15 Mar. 1989, pp. 5535-5537.
Nakamura, et al., "Electron Focusing with Multiparell One-Dimensional Channels Made by Focused Ion Beam," Appl. Phys. Lett. 56 (4), 22 Jan. 1990, pp. 385-387.
Susumu Namba, "Focused Ion Beam Processing," Nuclear Instruments and Methods in Physics Research B39, (1989) pp. 504-510.
"Semiconductor Two-Dimensional Hole Gas Heterostructures," IBM Technical Disclosure Bulletin, vol. 29, No. 5, Oct. 1986.
D'Avanzo, D. C., "Proton Isolation for GaAs Integrated Circuits," IEEE Transactions on Electron Devices, vol. ED-29, No. 7, Jul. 1982, pp. 1051-1059.
Eden, R. C., et al., "Integrated Circuits: The Case for Gallium Arsenide," IEEE Spectrum, Dec. 1983, pp. 30-37.
Deng, X., "Oxygen Ion Beam Modification of GaAs," 2107 Nuclear Instruments & Methods in Physics Research, vols. 209-210, May 1983, pp. 657-661.
Hiramoto, T., "Fabrication of One-Dimensional GaAs Wires by Focused Ion Beam Implantation," J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 1014-1017.
Miyauchi, E., "Application of Focused Ion Beam Technology to Maskless Ion Implantation in a Molecular Beam Epitaxy Grown GaAs or AlGaAs Epitaxial Layer for Three-Dimensional Pattern Doping Crystal Growth," J. Vac. Sci. Technol. A 4 (3), May/Jun. 1986, pp. 933-938.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of generating active semiconductor structures by means of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of generating active semiconductor structures by means of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of generating active semiconductor structures by means of will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1408111

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.