Method of generating active semiconductor structures by means of

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437203, 437225, 437228, H01L 21306

Patent

active

053858654

ABSTRACT:
A novel unipolar transistor device has been realized starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600 nm wide 1D channel is insulated laterally from 2DES regimes by 700 nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room temperature operation is demonstrated yielding a 161S transconductance corresponding to 160 mS/mm 2D transconductance.

REFERENCES:
patent: 3655457 (1972-04-01), Duffy
patent: 3696274 (1978-10-01), Davis
patent: 4325073 (1982-04-01), Hughes et al.
patent: 4325181 (1982-04-01), Yoder
patent: 4460910 (1984-07-01), Chappell et al.
patent: 4771013 (1988-09-01), Curran
patent: 4796068 (1989-01-01), Katayama
patent: 4853341 (1989-08-01), Nishioka
patent: 4989052 (1991-01-01), Okada
patent: 5141879 (1992-08-01), Goronkin et al.
Demel et al, "One dimensional electronic systems in ultrafine mesa-etched single and multiple quantum well wires", Appl. Phys. lett. 53(22), 28 Nov. 1988, pp. 2176-2178.
Wiecke et al., "In-plane-gated quantum wire transistor fabricated with directly written focused ion beams", Appl. Phys. lett. 56(10), 5 Mar. 1990, pp. 928-930.
Moreland et al, "Air as an adjustable insulator for C-V and G-V analysis of semiconductor surfaces", Appl-Phys. lett. 45(1), 1 Jul. 1984, pp. 104-105.
Eden et al, "Integrated circuits: the case for gallium arsenide", IEEE spectrum, Dec. 1983, pp. 30-37.
Skocpol, W. J., et al., "Quantum Transport in Narrow Mosfet Channels," Surface Science 170 (1986) pp. 1-13.
Grambow, P., "Preparation of One-Dimensional Single and Multi-Layered Quantum Wire Structures by Ultrafine Deep Mesa Etching Techniques," Microelectronic Engineering 9 (1989) pp. 357-360.
Hirayama, et al., "Conductance Characteristics of Ballistic One-Dimensional Channels Controlled by a Gate Electrode," Appl. Phys. Lett. 54 (25), 19 Jun. 1989, pp. 2556-2558.
Nakamura, et al., "Electron Focusing with Multiparallel One-Dimensional Channels Made by Focused Ion Beam," Appl. Phys. Lett. 56 (4), 22 Jan. 1990, pp. 385-387.
Susumu Namba, "Focused Ion Beam Processing," Nuclear Instruments and Methods in Physics Research B39, (1989) pp. 504-510.
"Semiconductor Two-Dimensional Hole Gas Heterostructures," IBM Technical Disclosure Bulletin, vol. 29, No. 5, Oct. 1986.
D'Avanzo, D. C., "Proton Isolation for GaAs Integrated Circuits," IEEE Transactions on Electron Devices, vol. ED-29, No. 7, Jul. 1982, pp. 1051-1059.
Deng, X., "Oxygen Ion Beam Modification of GaAs," 2107 Nuclear Instruments & Methods in Physics Research, vols. 209/210, May 1983, pp. 657-661.
Hiramoto, T., "Fabrication of One-Dimensional GaAs Wires by Focused Ion Beam Implantation," J. Vac. Sci. Technol. B 6 (3), May/Jun. 1988, pp. 1014-1017.
Miyauchi, E., "Application of Focused Ion Beam Technology to Maskless Ion Implantation in a Molecular Beam Epitady Grown GaAs or AlGaAs Epitaxial Layer for Three-Dimensional Pattern Doping Crystal Growth," J. Vac. Sci. Technol. A 4 (3), May/Jun. 1986, pp. 933-938.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of generating active semiconductor structures by means of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of generating active semiconductor structures by means of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of generating active semiconductor structures by means of will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1102013

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.