Method of gas doping of vacuum evaporated epitaxial silicon film

Details Method of gas doping of vacuum evaporated epitaxial silicon film Method of gas doping of vacuum evaporated epitaxial silicon film

1974-10-18

1976-04-06

Rutledge, L. Dewayne

Coating processes

Electrical product produced

Condenser or capacitor

148174, 148175, 148189, 204192, 427 86, H01L 21203, H01L 21205

Patent

active

039491196

ABSTRACT:
A new technique for the controlled incorporation of doping impurities into homoepitaxial silicon films by gas bombardment with arsine and diborane has been investigated. Hall effect and conductivity measurements have been used to show that P and N-type silicon thin films, having mobility values close to those of bulk material may be evaporated at 700.degree.C onto silicon <111> substrates. The substrates are precleaned by evaporating 50A of silicon at 775.degree.C. Step etch measurements have shown that the gas doped films possess uniform impurity concentrations. Diode structures formed by evaporating P and N-type layers onto substrates of the opposite doping type have been investigated. These diodes show good rectification properties. Capacitance-voltage measurements confirm the abrupt nature of the evaporated junctions. Minority carrier lifetimes of 2 to 3.mu. sec. have been measured in the evaporated structures.

REFERENCES:
patent: 2834697 (1958-05-01), Smits
patent: 3524776 (1970-08-01), Hampikian et al.
patent: 3660062 (1972-05-01), Keller
weisberg, L. R., "Low-Temperature Vacuum Deposition --Silicon" J. Appl. Phys., Vol. 38, 1967, pp. 4537-4538.
Itoh et al., "Electrical Properties--Silicon on Sapphire--Evaporation" J. Appl. Phys, Vol. 39, No. 11, Oct. 1968, pp. 5310-5313.
Haq, K. E., "Deposition of Germanium Films by Sputtering" J. Electrochem. Soc., Vol. 112, No. 5, May 1965, pp. 500-502.
Booker et al., "Growth of Epitaxial Layers by Vacuum Evaporation" Phil. Mag., Ser. 8, Vol. 11, Jan., 1965, pp. 11-30.

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