Method of fusing trimming for semiconductor device

Details Method of fusing trimming for semiconductor device Method of fusing trimming for semiconductor device

2008-02-11

2010-11-09

Luu, Chuong Anh (Department: 2892)

Semiconductor device manufacturing: process

With measuring or testing

C438S017000, C438S132000, C438S467000

Reexamination Certificate

active

07829354

ABSTRACT:
Deviation occurring in a particular region in a plane of a resistor group which constitutes a semiconductor integrated circuit is improved and a quick increase in yield is accomplished. Provided is a fuse trimming method for a semiconductor device in which circuit elements such as transistors and resistors are formed on a semiconductor wafer and which has fuse elements capable of adjusting a resistance value of the resistors by laser trimming, including a resistor correction step of correcting in the particular region of the semiconductor wafer the resistance value of the resistors based on an amount of deviation from a target value of the resistance value of the resistors.

REFERENCES:
patent: 4531842 (1985-07-01), Schonberger
patent: 7084695 (2006-08-01), Porter
patent: 05013670 (1993-01-01), None

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