Method of forming wirings

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437194, H01L 2144

Patent

active

052721108

ABSTRACT:
A method of forming wirings which comprises depositing an Al or Al alloy wiring material to a predetermined thickness on a semiconductor substrate having a stepped dent such as a connection hole thereby filling and flattening the dent, then etching back the Al or Al alloy film to leave a portion to a predetermined thickness in the direction of the thickness, and a stop of patterning the thus left Al or Al alloy wiring material in desired wiring shape. Filling and flattening for the dent of the semiconductor substrate can be attained without causing trouble for the subsequent flattening of the inter-layer film, while preventing the reduction of the Al grain size of the Al or Al alloy film and preventing reduction of the electromigration resistance.

REFERENCES:
patent: 4884123 (1989-11-01), Dixit et al.
patent: 4977105 (1990-12-01), Okamoto et al.
patent: 5081064 (1992-01-01), Inoue et al.
patent: 5106781 (1992-04-01), Penning De Vries
patent: 5124780 (1992-06-01), Sandhu et al.
S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press, Sunset Beach, 1990, pp. 189-191, 254-255.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming wirings does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming wirings, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming wirings will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-308781

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.