Method of forming wiring using sputtered insulating mask

Details Method of forming wiring using sputtered insulating mask Method of forming wiring using sputtered insulating mask

1996-10-30

1998-01-20

Niebling, John

Fishing, trapping, and vermin destroying

437192, 437195, 437203, 20419223, H01L 2128

Patent

active

057100608

ABSTRACT:
A semiconductor device includes an inter-level insulating film formed on a semiconductor substrate, wiring layers formed at positions having different depths inside the inter-level insulating film, open aperture portions having different depths and formed in the inter-level insulating film so as to reach each of the wiring layer, a titanium nitride film (first conductor layer) formed on the inner surface of each of the open aperture portions and on the inter-level insulating film, a silicon oxide film (insulating film) formed on the titanium nitride film other than the titanium nitride film formed on the inner surface of each of the open aperture portions, a tungsten film (second conductor layer) formed inside each of the open aperture portions, and an aluminum wiring (third conductor layer) formed on the tungsten film.

REFERENCES:
patent: 4767724 (1988-08-01), Kim et al.
patent: 5202579 (1993-04-01), Fujii et al.
patent: 5272110 (1993-12-01), Koyama

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