Method of forming wiring pattern

Details Method of forming wiring pattern Method of forming wiring pattern

1999-01-21

2000-06-27

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438720, 438742, 216 67, 216 77, H01L 2100

Patent

active

060806818

ABSTRACT:
A wiring pattern forming method includes the step of: forming resist patterns on an aluminum or aluminum alloy conductive layer, the resist patterns including a low density pattern area and a high density pattern area; etching and removing a portion of a thickness of the conductive layer by an etching process presenting anti-microloading effect by using the resist patterns as an etching mask, and etching and removing another portion of the thickness of the conductive layer by an etching process presenting microloading effect by using the resist patterns as an etching mask. A method of forming an aluminum or aluminum alloy wiring pattern is provided which can maintain a high etching rate and reduce electron shading damage.

REFERENCES:
patent: 4980018 (1990-12-01), Mu et al.
patent: 5219485 (1993-06-01), Wang et al.
patent: 5411631 (1995-05-01), Hori et al.
patent: 5846443 (1998-12-01), Abraham
patent: 6008132 (1999-12-01), Tabara

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