Fishing – trapping – and vermin destroying
Patent
1991-01-03
1991-11-19
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437195, 437978, 437200, H01L 2144, H01L 2148
Patent
active
050666126
ABSTRACT:
In the course of a production of a semiconductor device with a multilayer insulating layer, when a contact hole is opened in the multilayer insulating layer, an insulating layer activating a metal selective vapor-growth appears at the side wall of the contact hole. A thin metal (e.g., tungsten) layer is selectively deposited in the contact hole. In another case, another metal layer appears within the contact hole. An insulating film preventing a metal selective vapor-growth is deposited over the whole surface of the side wall of the contact hole, the metal layer and a top surface of the multilayer insulating layer, and is anisotropically etched to leave a portion of the film lying on the side wall only as a side wall insulating film. The contact hole is completely filled with another metal (tungsten) by a selective vapor-growth method, to flatten an exposed surface, and then a conductor (e.g., aluminum) line layer is formed on the metal layer in the contact hole and the multilayer insulating layer, to thereby complete the wiring structure of the semiconductor device.
REFERENCES:
patent: 4948755 (1990-08-01), Mo
patent: 4963511 (1990-10-01), Smith
patent: 4987099 (1991-01-01), Flanner
Hara Tatsushi
Miyagaki Shinji
Morishita Kenji
Ohba Takayuki
Ri Seigen
Dang Trung
Fujitsu Limited
Hearn Brian E.
LandOfFree
Method of forming wiring of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming wiring of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming wiring of a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1370081