Method of forming wide, deep dielectric filled isolation trenche

Details Method of forming wide, deep dielectric filled isolation trenche Method of forming wide, deep dielectric filled isolation trenche

1981-12-30

1983-05-31

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

156643, 156652, 156653, 156657, C23C 1500

Patent

active

043859755

ABSTRACT:
A method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate by forming a wide plug of chemical vapor deposited silicon dioxide in the trench, filling the remaining unfilled trench portions by chemical vapor depositing a layer of silicon dioxide over the substrate and etching back this layer. The method produces chemically pure, planar wide deep dielectric filled isolation trenches and may also be used to simultaneously produce narrow deep dielectric filled isolation trenches.

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patent: 4338138 (1982-06-01), Caualiere
T. A. Bartush et al., "Dielectric Isolation Planarization", IBM Technical Disclosure Bulletin, vol. 21, No. 5, Oct. 1978, pp. 1868-1869.

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