Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Patent
1998-07-29
2000-04-04
Chaudhari, Chandra
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
438462, H01L 2176
Patent
active
060460946
ABSTRACT:
A semiconductor processing method of forming integrated circuitry on a semiconductor wafer includes, a) forming at least two discrete wafer alignment patterns on the wafer, the two discrete alignment patterns having respective series of elevation steps provided therein; and b) while fabricating integrated circuitry elsewhere on the wafer, processing a first portion of at least one of the alignment patterns differently from a second portion of the one alignment pattern to render the first portion to be different from the second portion in the one alignment pattern. Such preferably superimposes a secondary step, most preferably of the same degree, over only a portion of the elevation steps in at least one of the wafer alignment patterns. Further, a semiconductor processing method of forming integrated circuitry on a semiconductor wafer includes, i) forming at least two discrete wafer alignment patterns on the wafer, the two discrete alignment patterns having respective series of elevation steps provided therein; and ii) while fabricating integrated circuitry elsewhere on the wafer, processing one of the alignment patterns differently from the other to render the one alignment pattern to be different from the other alignment pattern.
REFERENCES:
patent: 4326805 (1982-04-01), Feldman
patent: 4632724 (1986-12-01), Chesebro et al.
patent: 4679942 (1987-07-01), Suwa et al.
patent: 4893163 (1990-01-01), Rudeck
patent: 4936930 (1990-06-01), Gruber et al.
patent: 5128283 (1992-07-01), Tanaka
patent: 5300816 (1994-04-01), Lee et al.
patent: 5308682 (1994-05-01), Morikawa
patent: 5316966 (1994-05-01), Van Der Plas et al.
patent: 5406373 (1995-04-01), Kamon
patent: 5532091 (1996-07-01), Mizutani
patent: 5614767 (1997-03-01), Ohara
patent: 5618753 (1997-04-01), Tokushima
patent: 5646452 (1997-07-01), Narimatsu
patent: 5700732 (1997-12-01), Jost et al.
patent: 5798292 (1998-08-01), Jose et al.
Hansen David J.
Jost Mark E.
McDonald Steven M.
Chaudhari Chandra
Micro)n Technology, Inc.
Thompson Craig
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