Method of forming vias on a wafer stack using laser ablation

Details Method of forming vias on a wafer stack using laser ablation Method of forming vias on a wafer stack using laser ablation

2006-10-10

2006-10-10

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S459000, C438S460000, C257SE21088

Reexamination Certificate

active

07118989

ABSTRACT:
Disclosed are various embodiments of a method of forming vias for backside connections in a wafer stack, wherein the vias are formed by non-thermal laser ablation. Other embodiments are described an claimed.

REFERENCES:
patent: 6333485 (2001-12-01), Haight et al.
patent: 6738396 (2004-05-01), Filgas et al.
patent: 2003/0232486 (2003-12-01), Mashino
V. Mizeikis et al., “Silicon Surface Processing Techniques for Micro-System Fabrication”, Thin Solid Films 438-439, pp. 445-451 (2003).
X. Liu, “Submicron Lines on Thin Metal Films Micromachined by an Ultrafast Laser Osillator”, Lasers and Electro-Optics, CLEO '98, Technical Digest (May 1998).
Dr. P. Bado et al., Micromachining Handbook, Ver. 2.3, CLark-MXR, Inc. (2001), available at “http://www.cmxr.com/Industrial/Handbook/Index/htm”.

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