Semiconductor device manufacturing: process – Forming schottky junction – Combined with formation of ohmic contact to semiconductor...
Reexamination Certificate
2006-10-24
2006-10-24
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Forming schottky junction
Combined with formation of ohmic contact to semiconductor...
C438S716000, C438S707000, C438S712000, C438S730000, C438S740000, C257SE21603, C257SE31049, C257SE29104, C257SE21182
Reexamination Certificate
active
07125786
ABSTRACT:
A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished surface of the silicon carbide substrate to define a predetermined location for at least one via that is opposite the device metal contact on the uppermost surface of the epitaxial layer and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, metallizing the via provides an electrical path from the first surface of the substrate to the metal contact and to the device on the second surface of the substrate.
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Hagleitner Helmut
Ring Zoltan
Sheppard Scott
Cree Inc.
Estrada Michelle
Summa, Allan & Additon, P.A.
Tobergte Nicholas J.
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