Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2009-12-10
2011-12-06
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S022000, C438S028000, C438S046000, C438S455000, C438S456000, C438S458000, C438S483000
Reexamination Certificate
active
08071401
ABSTRACT:
The present invention is to provide a method of forming a vertical structure light emitting diode with a heat exhaustion structure. The method includes steps of: a) providing a sapphire substrate; b) depositing a number of protrusions on the sapphire substrate, each of which has a height of p; c) forming a buffer layer having a number of recesses, each of which has a depth of q smaller than p so that when the protrusions are accommodated within the recesses of the buffer layer, a number of gaps are formed therebetween for heat exhaustion; d) growing a number of luminescent layers on the buffer layer, having a medium layer formed between the luminescent layers and the buffer layer; e) etching through the luminescent layers and the buffer layer to form a duct for heat exhaustion; f) removing the sapphire substrate and the protrusions by excimer laser lift-off (LLO); g) roughening the medium layer; and h) depositing electrodes on the roughened medium layer.
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Chang Jean Ching-Hwa
Chen Jang-Ho
Chen Shiue-Lung
Feng Jeng-Kuo
Au Bac
Bacon & Thomas PLLC
Picardat Kevin M
Walsin Lihwa Corporation
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