Semiconductor device manufacturing: process – Forming schottky junction – Using refractory group metal
Reexamination Certificate
2007-04-30
2008-11-04
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Forming schottky junction
Using refractory group metal
C977S762000
Reexamination Certificate
active
07446025
ABSTRACT:
A vertical FET structure with nanowire forming the FET channels is disclosed. The nanowires are formed over a conductive silicide layer. The nanowires are gated by a surrounding gate. Top and bottom insulator plugs function as gate spacers and reduce the gate-source and gate-drain capacitance.
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Cohen Guy M.
Solomon Paul M.
International Business Machines - Corporation
Le Thao P.
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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