Method of forming uniformly thin, isolated silicon mesas on an i

Details Method of forming uniformly thin, isolated silicon mesas on an i Method of forming uniformly thin, isolated silicon mesas on an i

1992-10-27

1993-11-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

156636, 156649, H01L 21302

Patent

active

052643875

ABSTRACT:
A method comprising the steps of: providing a substrate including an insulator material having a generally planar surface; forming a plurality of mesas of a semiconductor material on the substrate surface, the plurality of mesas spaced by channels extending to the substrate surface, the plurality of mesas including device mesas and dummy mesas; forming a polish-stop structure of at least one selected material over the substrate surface in the channels; polishing the plurality of mesas and stopping on the polish-stop structure whereby the plurality of mesas have the same thickness as the polish-stop structure; and replacing the dummy mesas with an insulator material whereby to electrically isolate the device mesas.

REFERENCES:
patent: 4662986 (1987-05-01), Lim
patent: 4735679 (1988-04-01), Lasky
patent: 4755481 (1988-07-01), Faraone
patent: 4842675 (1989-06-01), Chapman et al.
patent: 4927781 (1990-05-01), Miller
patent: 5084407 (1992-01-01), Boland et al.
patent: 5177028 (1993-01-01), Manning

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