Method of forming twin doped regions of the same depth by high e

Details Method of forming twin doped regions of the same depth by high e Method of forming twin doped regions of the same depth by high e

1986-04-15

1988-03-08

Roy, Upendra

Fishing, trapping, and vermin destroying

357 91, 437 34, 437 36, 437 56, 437150, 437953, H01L 21265, H01L 2122

Patent

active

047299649

ABSTRACT:
First conductivity type impurity ions are implanted at a predetermined depth all over a region where impurity ions are to be implanted, and second conductivity type impurity ions are implanted in a dose about twice as large as that of the first conductivity type impurity ions at substantially the same implantation depth of the first conductivity type impurity ions, followed by annealing.
In this way, mutually contiguous first and second conductivity type regions having substantially the same impurity concentrations and located at substantially the same depths are formed.

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