Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-04-17
2007-04-17
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S218000, C438S745000, C438S749000, C438S747000, C438S750000, C438S584000, C438S738000, C438S791000, C438S424000, C257SE21546
Reexamination Certificate
active
11200632
ABSTRACT:
A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and an organic HF solvent under conditions effective to etch the silicon nitride substantially selectively relative to the oxide. Other aspects and implementations are contemplated.
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Fucsko Janos
Li Li
Torek Kevin J.
Waldo Grady S.
Ahmadi Mohsen
Lebentritt Michael
Wells St. John P.S.
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