Method of forming trench isolation for high voltage device

Details Method of forming trench isolation for high voltage device Method of forming trench isolation for high voltage device

1999-08-06

2000-10-17

Wilczewski, Mary

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438435, 438449, 438450, 438451, H01L 2176

Patent

active

061331171

ABSTRACT:
A trench isolation structure for high voltage device is provided including a high voltage well, a low voltage well, and trench oxide. The high voltage well is formed first to be the deep junction isolation of isolation region. Next, the trench oxide isolation is formed overlying the high voltage well. Then, the low voltage well with higher concentration is formed underlying the trench oxide by using high energy implant. The isolation structure is a trench oxide(dielectric isolation)-junction isolation structure.

REFERENCES:
patent: 5686347 (1997-11-01), Yang
patent: 5849625 (1998-12-01), Hsue et al.
patent: 5891776 (1999-04-01), Han et al.
patent: 5904541 (1999-05-01), Rho et al.

Affiliated with

Also associated with

Rating

Method of forming trench isolation for high voltage device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming trench isolation for high voltage device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming trench isolation for high voltage device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-468142