Method of forming trench isolation

Details Method of forming trench isolation Method of forming trench isolation

2006-10-18

2010-10-12

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S692000, C438S753000

Reexamination Certificate

active

07811897

ABSTRACT:
A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditions and for a period of time effective to etch the elemental silicon from the substrate. Wet etching can be employed in methods of forming trench isolation, and in other methods. Other aspects and implementations are contemplated.

REFERENCES:
patent: 3434896 (1969-03-01), Chance
patent: 5099304 (1992-03-01), Takemura et al.
patent: 5155058 (1992-10-01), Fujiwara et al.
patent: 5650043 (1997-07-01), Kaji et al.
patent: 6306775 (2001-10-01), Li
patent: 6955972 (2005-10-01), Lee et al.
patent: 7135381 (2006-11-01), Fucsko et al.
Bertagna et al.,Ionic components dependence of the charge transfer reactions at the silicon / HF solution interface, 4 J. Solid State Electrochem. 42-51 (1999).

Affiliated with

Also associated with

Rating

Method of forming trench isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming trench isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming trench isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4222997