Method of forming trench isolation

Details Method of forming trench isolation Method of forming trench isolation

1998-10-14

2000-01-11

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438435, 438692, 148DIG50, H01L 2176

Patent

active

06013559&

ABSTRACT:
A method of fabricating a trench isolation structure in a semiconductor devices. First, a mask layer is formed on a substrate and patterned. Then, a trench is formed in the substrate using the mask layer as a mask. An insulating layer is formed under the mask layer to fill the trench. The insulating layer is polished to expose a portion of the mask layer and an insulating plug is left in the trench. A RTP is performed to avoid mobile ions diffuse into the substrate. There are several operating conditions for the RTP. For example the operating temperature is ranged from about 600.degree. C. to about 1300.degree. C. The duration for performing the RTP is ranged from about 5 seconds to about 5 minutes. The operating gas can be selected from one of a group of N.sub.2, O.sub.2, or N.sub.2 O. Besides, before the RTP a cleaning step is performed using SC-1 or hydrogen fluoride (HF) solution as cleaning solution.

REFERENCES:
patent: 5726090 (1998-03-01), Jang et al.
patent: 5728621 (1998-03-01), Zheng et al.
patent: 5731241 (1998-03-01), Jang et al.
patent: 5851899 (1998-12-01), Weigand
patent: 5923993 (1999-07-01), Sahota

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