Method of forming trench isolated regions with sidewall doping

Details Method of forming trench isolated regions with sidewall doping Method of forming trench isolated regions with sidewall doping

1992-02-24

1994-03-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 56, 437 67, 437160, 437162, H01L 21225, H01L 21302

Patent

active

052963926

ABSTRACT:
In a semiconductor substrate, a method of forming a shallow isolation trench having a doped sidewall is disclosed. A shallow trench having nearly vertical walls is formed in the semiconductor substrate. A doped silicon layer is selectively grown on a sidewall and a portion of the bottom of the trench. The dopant from the silicon layer is then driven into the substrate by a suitable method such as annealing. The trench is subsequently filled with a dielectric material.

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