Method of forming trench buried wiring for semiconductor device

Details Method of forming trench buried wiring for semiconductor device Method of forming trench buried wiring for semiconductor device

1992-03-19

1993-11-30

Quach, T. N.

Fishing, trapping, and vermin destroying

437198, 437229, 437944, 437192, 148DIG100, H01L 21441, H01L 21469

Patent

active

052665267

ABSTRACT:
A method of forming a trench buried wiring on a semiconductor device. The method includes the steps of: forming a trench in a first insulating film formed on a semiconductor substrate, by using as a mask a photoresist layer, the trench having substantially an upright step; depositing a first electrode material on the surface of the photoresist layer and on the bottom of the trench, while leaving the photoresist layer; removing the photoresist layer and the first electrode material on the photoresist layer while leaving the first electrode material only on the bottom of the trench; and filling a second electrode material in the trench to form a composite electrode with the second electrode material being superposed on the first electrode material.

REFERENCES:
patent: 4335506 (1982-06-01), Chiu et al.
patent: 4508815 (1985-04-01), Ackmann et al.
patent: 5069747 (1991-12-01), Cathey et al.

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