Method of forming transparent conductive layer, photoelectric co

Details Method of forming transparent conductive layer, photoelectric co Method of forming transparent conductive layer, photoelectric co

1995-04-19

1997-02-18

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136256, 136258, 257 53, 257 55, 257436, 257458, 437 2, 437 4, 437181, 20419229, H01L 31075, H01L 3120, C23C 1434

Patent

active

056037783

ABSTRACT:
A photoelectric conversion device which has high conversion efficiency and high reliability, and a manufacturing method to make the photoelectric conversion device at a low cost are provided by improving a method of forming a transparent conductive metal oxide film to achieve stable film production for a long period of time and to prevent deterioration in transparency and resistance of such an oxide layer otherwise caused by high-rate film formation. In a method of manufacturing a photoelectric conversion device which comprises a reflecting layer at least one surface of which has high reflectivity to light, and a transparent conductive oxide layer formed by a sputtering process, a thin film semiconductor junction laminate a transparent electrode which are formed on the reflecting layer in this order, the metal oxide layer is formed by sputtering in which a metal oxide target having specific resistance not larger than 5.0 .OMEGA.cm and a crystal particle size not larger than 15 .mu.m is employed and discharge is developed using a gas mixture of an Ar gas with 0.1 to 10% added oxygen (O.sub.2).

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patent: 5342452 (1994-08-01), Saito et al.
patent: 5352300 (1994-10-01), Niwa
patent: 5453135 (1995-09-01), Nakagawa et al.

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