Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Isolation by pn junction only
Reexamination Certificate
2005-12-29
2010-02-09
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Isolation by pn junction only
C438S419000, C438S420000, C438S433000, C438S447000, C438S449000, C257S542000, C257S591000
Reexamination Certificate
active
07659179
ABSTRACT:
A method of forming a memory device includes forming first and second isolation structures on a semiconductor substrate, the first and second isolation structures defining an active region therebetween; and etching a portion of the semiconductor substrate provided within the active region to define a step profile, so that the active region includes a first vertical portion and an upper primary surface, the first vertical portion extending above the upper primary surface.
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Taiwan Intellectual Property Office, Office Action, Application No. 094147850, Mar. 12, 2008.
Hynix / Semiconductor Inc.
Singal Ankush K
Toledo Fernando L
Townsend and Townsend / and Crew LLP
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