Method of forming through-wafer interconnects for vertical...

Details Method of forming through-wafer interconnects for vertical... Method of forming through-wafer interconnects for vertical...

2007-02-27

2007-02-27

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21568, C257SE21570

Reexamination Certificate

active

10925683

ABSTRACT:
A wafer is provided having through-holes therein to form a through-hole via wafer. A substrate of a sacrificial wafer is provided. The substrate is coated with a polymer having low adhesion to metals. A conductive layer is deposited on the polymer. A photoresist layer is coated on the conductive layer. The through-hole via wafer is bonded to the sacrificial wafer wherein the photoresist layer provides the bonding. The photoresist exposed in the through-holes is developed away to expose the conductive layer. The through-holes are filled with a conductive material by electroplating the conductive layer. The photoresist is stripped in an ultrasonic bath wherein the photoresist separates from the through-hole wafer and wherein the filled through-holes separate from the polymer at an interface between the polymer and the conductive layer to complete separation of the through-hole via wafer from the sacrificial wafer.

REFERENCES:
“Through-wafer copper electroplating for three-dimensional Ic's,” N.T. Nguyen et al., Institute of Physics Publishing,Jrnl. of Micromech. and Microeng., C. 2002, pp. 395-399.
“A Novel Electrically Conductive Wafer Through Hole Filled Vias Interconnect For 30 MEMS Packaging”, by C.S. Premachandran et al., 2003 Elec. Comp. and Tech. Conf., c. 2003, IEEE, pp. 627-630.
“Wafer-level membrane transfer bonding of polycrystalline silicon balometers for use in infrared focal plane arrays,” by F. Niklaus et al.,Jrnl. of Micromech. and Microeng., 2001, pp. 509-513.

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