Method of forming through holes by differential etching of stack

Details Method of forming through holes by differential etching of stack Method of forming through holes by differential etching of stack

1984-06-29

1985-10-01

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29576J, 148 15, 148187, 148DIG82, 156653, 357 54, H07L 2190, B44C 122

Patent

active

045437076

ABSTRACT:
A process of manufacturing a semiconductor device by which a through hole such as contact hole with an obtuse opening edge can be formed in an insulation or passivation layer. At least two silicon oxynitride layers in which the nitrogen to oxygen ratio differs from each other are formed on a semiconductor substrate. The etching rate of the top layer is greater than that of the second layer from the top. The stacked silicon oxynitride layers are then selectively etched to form a through hole with an obtuse opening edge.

REFERENCES:
patent: 4174251 (1979-11-01), Paschke
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patent: 4334349 (1982-06-01), Aoyama et al.
patent: 4337115 (1982-06-01), Ikeda et al.
patent: 4363868 (1982-12-01), Takasaki et al.
patent: 4484978 (1984-11-01), Keyser
patent: 4484979 (1984-11-01), Stocker
Nakata et al., Jap. Jour. Appl. Phy. 22, (Jan. 1983), 188.

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