Method of forming thin silicon oxide film with high dielectric b

Details Method of forming thin silicon oxide film with high dielectric b Method of forming thin silicon oxide film with high dielectric b

1996-02-26

1997-12-02

Niebling, John

Fishing, trapping, and vermin destroying

437239, H01L 2102

Patent

active

056935781

ABSTRACT:
A method of forming a silicon oxide film by setting a silicon wafer in a chamber capable of introducing oxidizing gas and being evacuated and by heating the silicon wafer in an oxidizing atmosphere. The method includes the steps of: transporting the silicon wafer into the chamber without contacting the silicon wafer with air; introducing an ozone containing gas into the chamber and setting the interior of the chamber to a predetermined pressure; and heating the silicon wafer to a predetermined temperature and oxidizing the surface of the silicon wafer. The predetermined pressure is preferably between 200 Torr and 0.1 Torr. Ozone may be generated from oxygen by applying ultraviolet rays to the upper space of a silicon wafer. The temperature of ozone to be introduced is preferably low. It is preferable to incorporate infrared heating in order not to excessively heat ozone and to heat a silicon wafer to a high temperature.

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