Method of forming thin ruthenium-containing layer

Details Method of forming thin ruthenium-containing layer Method of forming thin ruthenium-containing layer

2008-09-30

2008-09-30

Meeks, Timothy (Department: 1792)

Coating processes

Applying superposed diverse coating or coating a coated base

Metal coating

C427S248100, C427S255310, C427S402000

Reexamination Certificate

active

11014214

ABSTRACT:
A method of forming a thin ruthenium-containing layer includes performing a CVD process using butyl ruthenoscene as a ruthenium source material. The thin ruthenium-containing layer may be formed by a one-step or two-step CVD process. The one-step CVD process is performed under a constant oxygen flow rate and a constant deposition pressure. The two-step CVD process includes forming a seed layer and forming a main layer, each of which is performed under a different process condition of a deposition temperature, an oxygen flow rate, and a deposition pressure.

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