Method of forming thin oxysulfide film

Details Method of forming thin oxysulfide film Method of forming thin oxysulfide film

1992-12-10

1994-04-05

Green, Anthony

Coating processes

Electrical product produced

Fluorescent or phosphorescent base coating

427 69, 4272552, 4272553, 4274192, 25230145, 313498, 313509, B05D 512, B05D 306

Patent

active

053003160

ABSTRACT:
In order to provide a thin oxysulfide film excellent in crystallinity and suitable for use as a luminescent layer of a thin film EL device and a thin fluorescent film for a CRT, a metal element is evaporated from an evaporation source provided in a chamber in which a sulfur gas and an oxygen gas have been introduced to combine those substances chemically on a substrate provided in the chamber to form a thin oxysulfide film on a surface of the substrate.

REFERENCES:
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patent: 5006365 (1991-04-01), Nire et al.
patent: 5084312 (1992-01-01), Krikorian et al.
patent: 5096735 (1992-03-01), Nakaya et al.
patent: 5110622 (1992-05-01), Hasegawa et al.
patent: 5116640 (1992-05-01), Mikami et al.
patent: 5147683 (1992-09-01), Tanaka et al.
Wolf and Tauber, Silicon Processing for the VLSI Era, "Chemical Vapor Deposition of Amorphous & Polycrystalline Thin Films," p. 164, 1986.

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