Method of forming thin film terminations of low inductance ceram

Details Method of forming thin film terminations of low inductance ceram Method of forming thin film terminations of low inductance ceram

1989-04-04

1989-08-29

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

29 2542, 361411, H01G 101, H01G 306, H05K 104

Patent

active

048623180

ABSTRACT:
An improved method for forming shorting bars on ceramic capacitors of the tab type includes the step of effecting a final polishing of the tab exposed surface utilizing grit or abrasives of a critical size, namely of average particle size in the range of about 2 to about 10 microns. The method further employs thin film metallurgy namely the vacuum deposition or sputtering of one or more layers within specified thickness ranges. There is further disclosed an improved capacitor fabricated in accordance with the method described.

REFERENCES:
patent: 3508118 (1970-04-01), Merrin et al.
patent: 3621442 (1971-11-01), Racht et al.
patent: 3872356 (1975-03-01), Kruger et al.
patent: 4430690 (1984-02-01), Chance et al.
patent: 4661192 (1987-04-01), McShane

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