Method of forming thin film for semiconductor device

Details Method of forming thin film for semiconductor device Method of forming thin film for semiconductor device

1993-06-11

1995-07-04

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437246, 4272551, H01L 21285

Patent

active

054299918

ABSTRACT:
A method of forming a thin film for a semiconductor device, for forming a metal thin film by chemical vapor deposition on an intermediate layer which is provided on a substrate, comprises the steps of activating the surface of the intermediate layer by introducing a halide gas of a metal for forming the thin film onto the surface of the intermediate layer, forming nuclei on the surface of the intermediate layer by introducing a silane-system gas onto the activated surface of the intermediate layer, and introducing the halide gas and a reducing gas onto the surface of the intermediate layer formed with the nuclei, thereby depositing the metal thin film on the surface of the intermediate layer.

REFERENCES:
patent: 3696779 (1972-10-01), Murai
patent: 4505949 (1985-03-01), Jelks
patent: 4592306 (1986-06-01), Gallego
patent: 4615298 (1986-10-01), Yamazaki
patent: 4777061 (1988-10-01), Wu et al.
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4825808 (1989-05-01), Takahashi
patent: 4918033 (1990-04-01), Bartha et al.
patent: 4960732 (1990-10-01), Dixit et al.
patent: 4969415 (1990-11-01), Bartha
patent: 4976996 (1990-12-01), Monkowski
patent: 5028565 (1991-07-01), Chang et al.
patent: 5034348 (1991-07-01), Hartswick et al.
patent: 5084417 (1992-01-01), Joshi et al.
J. R. Creighton, "A Mechanism for Selectivity Loss During Tungsten CVD", J. Electrochemical Society, vol. 136, No. 1, (Jan. 1989), pp. 271-275.

Affiliated with

Also associated with

Rating

Method of forming thin film for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming thin film for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming thin film for semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-759905