Method of forming thin film by chemical vapor deposition

Details Method of forming thin film by chemical vapor deposition Method of forming thin film by chemical vapor deposition

1989-05-30

1990-05-08

Childs, Sadie

Coating processes

Interior of hollow article coating

Coating by vapor, gas, mist, or smoke

427253, 427255, B05D 722, C23C 1608

Patent

active

049237152

ABSTRACT:
A method for the formation of a thin, high melting-point metal film such as W, on a substrate surface, by means of CVD, is disclosed herein. In this method, the inner wall of the CVD reaction tube and the surface of the at least part of the fittings disposed therewithin are covered with a metal nitride film, in the process of performing the CVD operation. The method permits the formation of a high quality film, and also prevents the deposition of the high melting-point metal on the inner wall of the reaction chamber, even if the CVD operation is repeatedly performed over a long period of time.

REFERENCES:
patent: 3031338 (1962-04-01), Bourdeau
patent: 3178308 (1965-04-01), Oxley et al.
patent: 3746569 (1973-07-01), Pammec et al.
patent: 4123989 (1978-11-01), Jewett
patent: 4650698 (1987-03-01), Moriya et al.

Affiliated with

Also associated with

Rating

Method of forming thin film by chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming thin film by chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming thin film by chemical vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2348274